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| MBR4030PT - MBR4060PT 40A SCHOTTKY BARRIER RECTIFIER Features * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 TO-3P Dim A B C D E G H J K Min 3.20 4.59 20.80 19.70 2.10 0.51 15.90 1.70 3.10AE 3.50 5.20 1.12 1.93 2.97 11.70 Max 3.50 5.16 21.30 20.20 2.40 0.76 16.40 2.70 3.30AE 4.51 5.70 1.22 2.18 3.22 12.80 H S R P* *2 Places N Q L G A B J K C Mechanical Data * * * * * * Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Marking: Type Number Weight: 5.6 grams (approx.) Mounting Position: Any L D M N P Q R S E M M 4.30 Typical All Dimensions in mm @ TA = 25C unless otherwise specified Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage @ TC = 125C (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance Typical Thermal Resistance Junction to Case Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range Notes: @ IF = 20A, TC = 25C @ IF = 20A, TC = 125C @ TC = 25C @ TC = 125C (Note 2) (Note 1) Average Rectified Output Current Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJc dV/dt Tj, TSTG MBR 4030PT 30 21 MBR 4035PT 35 24.5 MBR 4040PT 40 28 40 MBR 4045PT 45 31.5 MBR 4O50PT 50 35 MBR 4060PT 60 42 Unit V V A A 400 0.70 0.60 1.0 100 1100 1.4 10,000 -65 to +150 0.80 0.70 V mA pF K/W V/ms C 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS23019 Rev. E-2 1 of 2 MBR4030PT - MBR4060PT 40 IF, INSTANTANEOUS FORWARD CURRENT (A) 50 100 I(AV), AVERAGE FWD CURRENT (A) MBR 4030PT - MBR4045PT 10 30 MBR4050PT - MBR4060PT 20 1.0 10 0 0 50 100 150 0.1 0.2 TC, CASE TEMPERATURE (C) Fig. 1 Fwd Current Derating Curve 0.9 0.8 0.3 0.4 0.6 0.7 0.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) TJ = 25C f = 1 Mhz 400 IFSM, PEAK FWD SURGE CURRENT (A) 8.3 ms Single half sine-wave (JEDEC method) 4000 300 Cj, CAPACITANCE (pF) 1000 200 100 1 100 100 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (A) 10 TC = 125C 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 1.0 0.1 TC = 75C 0.01 TC = 25C 0.001 0 20 40 60 80 100 Tj = 25C 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23019 Rev. E-2 2 of 2 MBR4030PT - MBR4060PT |
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